Compound semiconductor alloys.

Two-dimensional semiconductor alloys: Monolayer Mo12xWxSe2

Dipole scattering in highly polar semiconductor alloys

The wide gap polar semiconductors III-V nitrides, II-VI oxides, and ferroelectrics exhibit large spontaneous and piezoelectric polarization due to their nonsymmetric crystal structures. Electrical conductivity in alloys of such crystals is degraded by scattering from the varying polarization coupled to alloy disorder. We have modeled this effect by dipole scattering. We have calculated dipole s...

Compound semiconductor MEMS community targets new applications

The multi-billion-dollar market for micro-electro-mechanical systems (MEMS) devices containing micron-sized moving parts produced by photolithographic processes is overwhelmingly dominated by silicon. However, this material is not suitable for the fabrication of certain devices, and academic institutions and company research labs are using various compound semiconductor materials to produce MEM...

Compound Semiconductor Based Tunnel Transistor Logic

We introduce a new transistor architecture based on inter-band tunneling mechanism as a step towards exploring steep switching transistors for energy efficient logic applications. While there have been reports on tunnel transistors in Si, Ge material system and their alloys, we focus specifically on narrow gap compound semiconductor (CS) systems to develop tunnel transistors. We address the fol...

Compound semiconductor nanotube materials grown and fabricated

A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good cry...